Vishay E Series N-Kanal Dual, SMD MOSFET 800 V / 21 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,184 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V, Transistor-Werkstoff: Si, MPN: SIHB24N80AE-GE3
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Vishay E Series N-Kanal Dual, SMD MOSFET 800 V / 21 A, 3-Pin D2PAK (TO-263)
Specifications of Vishay E Series N-Kanal Dual, SMD MOSFET 800 V / 21 A, 3-Pin D2PAK (TO-263) | |
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Instock | instock |