IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 1100 W, Transistor Configuration: Series, Dimensions: 152 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount
Specifications of IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount | |
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