ROHM RGTV00TS65GC11 IGBT, 95 A 650 V, 3-Pin TO-247, Through Hole
ROHM RGTV00TS65GC11 IGBT, 95 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 276 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 2890pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C.