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Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole

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Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.54 x 4.69 x 8.77mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole

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Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole
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