STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole
About The 8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C
STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole | |
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