onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 535 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C
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Onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
Specifications of Onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole | |
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Instock | instock |
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