IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1150 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole
Specifications of IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole | |
---|---|
Category | |
Instock | instock |
Last Updated