Semikron Half Bridge IGBT Transistor Module, 300 A 1200 V

Nexperia 40V 200mA, Schottky Diode, 2-Pin I-IGIA 1PS79SB30,115, Mounting Type: Surface Mount, Diode Configuration: Single, Peak Non-Repetitive Forward Surge Current: 1A.

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Vishay 200V 2A, Ultrafast Rectifiers Diode, 2-Pin DO-214AA ES2D-E3/52T, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Diode Configuration: Single, Rectifier Type: Switching, Diode Type: Silicon Junction, Maximum Forward Voltage Drop: 900mV, Peak Reverse Recovery Time: 30ns, Peak Non-Repetitive Forward Surge Current: 50A.

Semikron Half Bridge IGBT Transistor Module, 300 A 1200 V, Maximum Gate Emitter Voltage: ±15.0V, MPN: SKM300GB12F4.

1 (Dia.) x 9.

0V, MPN: SKM300GB12F4.Semikron Half Bridge IGBT Transistor Module, 300 A 1200 V, Maximum Gate Emitter Voltage: ±15.

) x 9.