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Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

About The Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 305 W

Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 305 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

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Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
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    • Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3.

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    • Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 305 W.

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    • Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3.

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    • Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

    Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 305 W.

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