Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Series
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Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Specifications of Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM | |
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Instock | instock |
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