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Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

About The 9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

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Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
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    Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

    9 x 4.Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.

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    • Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

    Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

    8 x 20mm, Maximum Operating Temperature: +150 °C.9 x 4.

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