Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter
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Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
Specifications of Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD | |
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Instock | instock |
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