reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
IGBTs
Infineon

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

About The Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

Category
Instockinstock

Last Updated

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
More Varieties

Rating :- 9.74 /10
Votes :- 8