Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
About The 5 x 15mm, Maximum Operating Temperature: +150 °C.Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4
Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole | |
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