STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
About The STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263), Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 272 W, Number of Transistors: 1
STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263), Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 272 W, Number of Transistors: 1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263) | |
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| Category | |
| Instock | instock |
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