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Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3

About The Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 333 W

Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 333 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3

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Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3
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