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Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D

About The Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D, Mounting Type: Through Hole, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -5 V, +20 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C

Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D, Mounting Type: Through Hole, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -5 V, +20 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D

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Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D
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