Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 270 W
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Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263
Specifications of Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263 | |
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Instock | instock |
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