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STMicroelectronics P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6

About The 6mm, Maximum Operating Temperature: +175 °C.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6

STMicroelectronics P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.6mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6

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STMicroelectronics P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6
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