onsemi N-Channel MOSFET, 3.4 A, 100 V, 8-Pin SOIC FDS86106, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 177 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 4mm, Maximum Operating Temperature: +150 °C
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Onsemi N-Channel MOSFET, 3.4 A, 100 V, 8-Pin SOIC FDS86106
Specifications of Onsemi N-Channel MOSFET, 3.4 A, 100 V, 8-Pin SOIC FDS86106 | |
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