Nexperia Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 PMGD290XN,115, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 410 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Nexperia Dual N-Channel MOSFET, 860 MA, 20 V, 6-Pin SOT-363 PMGD290XN,115
Specifications of Nexperia Dual N-Channel MOSFET, 860 MA, 20 V, 6-Pin SOT-363 PMGD290XN,115 | |
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