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Onsemi N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 FDMC86184

About The 3V.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 54 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1

onsemi N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 FDMC86184, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 54 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 FDMC86184

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 FDMC86184

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Onsemi N-Channel MOSFET, 57 A, 100 V, 8-Pin PQFN8 FDMC86184
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