Infineon N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 150 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Maximum Operating Temperature: +175 °C
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Infineon N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF
Specifications of Infineon N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF | |
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