Infineon Dual N/P-Channel-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389TRPBF
Infineon Dual N/P-Channel-Channel MOSFET, 5.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.3 A, 30 V, 8-Pin SOIC IRF7389TRPBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 46 mΩ, 98 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.3 A, 7.