Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1 kW, Number of Transistors: 6
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Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK
Specifications of Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK | |
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Instock | instock |
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