reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
IGBTs
Infineon

Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK

About The Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1 kW, Number of Transistors: 6

Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1 kW, Number of Transistors: 6

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK

Category
Instockinstock

Last Updated

Infineon FS200R12PT4BOSA1 IGBT Module, 280 A 1200 V EconoPACK
More Varieties

Rating :- 9.84 /10
Votes :- 10