Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel Mount
About The Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel Mount, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 300 W
Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel Mount, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 300 W
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel Mount
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel Mount | |
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