Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 187 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.72mJ, Gate Capacitance: 1630pF
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Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
Specifications of Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole | |
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Instock | instock |
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