Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 274 W
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
Specifications of Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3 | |
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Instock | instock |
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