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Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

About The Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 274 W

Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 274 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

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Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
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