Infineon BFR106E6327HTSA1 NPN RF Bipolar Transistor, 210 mA, 16 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 20 V, Maximum Emitter Base Voltage: 3 V, Maximum Operating Frequency: 5 GHz, Dimensions: 2.9 x 1.3 x 1mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors
Infineon BFR106E6327HTSA1 NPN RF Bipolar Transistor, 210 MA, 16 V, 3-Pin SOT-23
Specifications of Infineon BFR106E6327HTSA1 NPN RF Bipolar Transistor, 210 MA, 16 V, 3-Pin SOT-23 | |
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Instock | instock |
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