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Infineon N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

About The 2V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.1mm, Maximum Operating Temperature: +150 °C

Infineon N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.1mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

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Infineon N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1
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