onsemi N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 FDP5800, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 242 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.7mm, Length: 9.9mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 FDP5800
Specifications of Onsemi N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 FDP5800 | |
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