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Onsemi N-Channel MOSFET, 110 A, 40 V, 3-Pin DPAK NTD5C446NT4G

About The 2V.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1

onsemi N-Channel MOSFET, 110 A, 40 V, 3-Pin DPAK NTD5C446NT4G, Mounting Type: Surface Mount, Pin Count: 3 + Tab, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 110 A, 40 V, 3-Pin DPAK NTD5C446NT4G

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 110 A, 40 V, 3-Pin DPAK NTD5C446NT4G

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Onsemi N-Channel MOSFET, 110 A, 40 V, 3-Pin DPAK NTD5C446NT4G
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