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IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

About The 66mm.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

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IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P
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