ROHM Dual P-Channel MOSFET, 3.5 A, 30 V, 6-Pin TSMT-6 RQ6E035ATTCR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.25 W, Maximum Gate Source Voltage: ±20 V, Length: 3mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM Dual P-Channel MOSFET, 3.5 A, 30 V, 6-Pin TSMT-6 RQ6E035ATTCR
Specifications of ROHM Dual P-Channel MOSFET, 3.5 A, 30 V, 6-Pin TSMT-6 RQ6E035ATTCR | |
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