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Onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

About The onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single

onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

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Onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247
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    • onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

    onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

    onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single.

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    • onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

    onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

    0V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single.

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