Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.65mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1
Specifications of Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1 | |
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