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Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1

About The 5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.65mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1

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Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1
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