onsemi N-Channel MOSFET, 11.4 A, 150 V, 3-Pin DPAK FDD770N15A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 77 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 56.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 11.4 A, 150 V, 3-Pin DPAK FDD770N15A
Specifications of Onsemi N-Channel MOSFET, 11.4 A, 150 V, 3-Pin DPAK FDD770N15A | |
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