STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.189 Ω, Maximum Gate Threshold Voltage: 3.5V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120
Specifications of STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120 | |
---|---|
Category | |
Instock | instock |
Last Updated