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STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

About The STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.189 Ω, Maximum Gate Threshold Voltage: 3

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.189 Ω, Maximum Gate Threshold Voltage: 3.5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

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STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120
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