onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.224 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V
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Onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1
Specifications of Onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1 | |
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