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Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole

About The 13 x 5.21 x 21

Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.13mJ, Gate Capacitance: 1050pF, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole

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Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole
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