IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole
About The 3 x 5.3 x 26
IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 695 W, Switching Speed: 20 → 60kHz, Transistor Configuration: Single, Dimensions: 20.3 x 5.3 x 26.6mm, Energy Rating: 600mJ, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole | |
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