IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 5 → 30kHz, Transistor Configuration: Single, Dimensions: 16.1 x 5.2 x 21.3mm, Energy Rating: 5.2mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C
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IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
Specifications of IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole | |
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Instock | instock |
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