Onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount
About The 67 x 9.3mJ, Gate Capacitance: 2495pF, Maximum Operating Temperature: +175 °C
onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 238 W, Number of Transistors: 1, Transistor Configuration: Single, Dimensions: 10.67 x 9.65 x 4.58mm, Automotive Standard: AEC-Q101, Energy Rating: 22.3mJ, Gate Capacitance: 2495pF, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount | |
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