STMicroelectronics STGP30H65F IGBT, 60 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 260 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C
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STMicroelectronics STGP30H65F IGBT, 60 A 600 V, 3-Pin TO-220, Through Hole
Specifications of STMicroelectronics STGP30H65F IGBT, 60 A 600 V, 3-Pin TO-220, Through Hole | |
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