Infineon N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK IPD80R600P7ATMA1, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS P7
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK IPD80R600P7ATMA1
Specifications of Infineon N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK IPD80R600P7ATMA1 | |
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