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Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

About The Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 160 W

Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 160 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

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Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3
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