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Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

About The 2 kW, Transistor Configuration: Common Emitter.Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 1

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 1.2 kW, Transistor Configuration: Common Emitter

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

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Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM
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