Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 1.2 kW, Transistor Configuration: Common Emitter
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Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM
Specifications of Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM | |
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Instock | instock |
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