Vishay Dual P-Channel MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 SI3993CDV-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 188 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.1mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay Dual P-Channel MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 SI3993CDV-T1-GE3
Specifications of Vishay Dual P-Channel MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 SI3993CDV-T1-GE3 | |
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