Infineon N-Channel MOSFET, 40 A, 30 V, 8-Pin TDSON BSZ065N03LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 26 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.4mm, Maximum Operating Temperature: +150 °C
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Infineon N-Channel MOSFET, 40 A, 30 V, 8-Pin TDSON BSZ065N03LSATMA1
Specifications of Infineon N-Channel MOSFET, 40 A, 30 V, 8-Pin TDSON BSZ065N03LSATMA1 | |
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