Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 390 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Length: 2.9mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Specifications of Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R | |
---|---|
Category | |
Instock | instock |
Last Updated