Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
2V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Length: 2.9mm, Maximum Operating Temperature: +150 °C.Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 390 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.